Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88333
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dc.contributor.authorYu, Xuechaoen
dc.contributor.authorYu, Pengen
dc.contributor.authorWu, Dien
dc.contributor.authorSingh, Bahaduren
dc.contributor.authorZeng, Qingshengen
dc.contributor.authorLin, Hsinen
dc.contributor.authorZhou, Wuen
dc.contributor.authorLin, Junhaoen
dc.contributor.authorSuenaga, Kazuen
dc.contributor.authorLiu, Zhengen
dc.contributor.authorWang, Qi Jieen
dc.date.accessioned2018-04-25T04:05:41Zen
dc.date.accessioned2019-12-06T17:00:57Z-
dc.date.available2018-04-25T04:05:41Zen
dc.date.available2019-12-06T17:00:57Z-
dc.date.copyright2018en
dc.date.issued2018en
dc.identifier.citationYu, X., Yu, P., Wu, D., Singh, B., Zeng, Q., Lin, H., et al. (2018). Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor. Nature Communications, 9, 1545-.en
dc.identifier.urihttps://hdl.handle.net/10356/88333-
dc.description.abstractThe interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras and so on. Although narrow bandgap semiconductors such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional atomically-thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared regime and we realize a midinfrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically-thin 2D noble metal dichalcogenides to be employed in highperformancemid-infrared optoelectronic devices.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent9 p.en
dc.language.isoenen
dc.relation.ispartofseriesNature Communicationsen
dc.rights© 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.subjectMid-infrared Semiconductoren
dc.subjectOptoelectronic Deviceen
dc.titleAtomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductoren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchCentre for OptoElectronics and Biophotonicsen
dc.contributor.researchCentre for Programmable Materialsen
dc.contributor.researchNanoelectronics Centre of Excellenceen
dc.identifier.doi10.1038/s41467-018-03935-0en
dc.description.versionPublished versionen
dc.identifier.rims203729en
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