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Title: Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser
Authors: Li, Xiang
Wang, Hong
Qiao, Zhongliang
Guo, Xin
Wang, Wanjun
Ng, Geok Ing
Zhang, Yu
Xu, Yingqiang
Niu, Zhichuan
Tong, Cunzhu
Liu, Chongyang
Keywords: Diode Lasers
Mode-locked Laser
Issue Date: 2018
Source: Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018). Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser. Optics Express, 26(7), 8289-8295.
Series/Report no.: Optics Express
Abstract: A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.
DOI: 10.1364/OE.26.008289
Rights: © 2018 Optical Society of America (OSA) . This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America (OSA) . The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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