Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLi, Xiangen
dc.contributor.authorWang, Hongen
dc.contributor.authorQiao, Zhongliangen
dc.contributor.authorGuo, Xinen
dc.contributor.authorWang, Wanjunen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorZhang, Yuen
dc.contributor.authorXu, Yingqiangen
dc.contributor.authorNiu, Zhichuanen
dc.contributor.authorTong, Cunzhuen
dc.contributor.authorLiu, Chongyangen
dc.identifier.citationLi, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018). Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser. Optics Express, 26(7), 8289-8295.en
dc.description.abstractA two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent7 p.en
dc.relation.ispartofseriesOptics Expressen
dc.rights© 2018 Optical Society of America (OSA) . This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America (OSA) . The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDiode Lasersen
dc.subjectMode-locked Laseren
dc.titleInvestigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laseren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles
TL Journal Articles

Google ScholarTM



Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.