Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/88353| Title: | Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | Authors: | Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Liu, Chongyang |
Keywords: | Laser Quantum Wells |
Issue Date: | 2017 | Source: | Li, X., Wang, H., Qiao, Z., Guo, X., Ng, G. I., Zhang, Y., et al. (2017). Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser. Applied Physics Letters, 111(25), 251105-. | Series/Report no.: | Applied Physics Letters | Abstract: | Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser. | URI: | https://hdl.handle.net/10356/88353 http://hdl.handle.net/10220/44613 |
ISSN: | 0003-6951 | DOI: | 10.1063/1.5010015 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2017 The Author(s) (published by AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The published version is available at: [http://dx.doi.org/10.1063/1.5010015]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Modal gain characteristics of a 2 μm InGaSb AlGaAsSb passively mode-locked quantum well laser.pdf | 1.19 MB | Adobe PDF |  View/Open |
SCOPUSTM
Citations
20
22
Updated on Mar 14, 2025
Web of ScienceTM
Citations
20
19
Updated on Oct 28, 2023
Page view(s) 50
528
Updated on Mar 18, 2025
Download(s) 50
192
Updated on Mar 18, 2025
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.