Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88353
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dc.contributor.authorLi, Xiangen
dc.contributor.authorWang, Hongen
dc.contributor.authorQiao, Zhongliangen
dc.contributor.authorGuo, Xinen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorZhang, Yuen
dc.contributor.authorNiu, Zhichuanen
dc.contributor.authorTong, Cunzhuen
dc.contributor.authorLiu, Chongyangen
dc.date.accessioned2018-03-26T04:28:53Zen
dc.date.accessioned2019-12-06T17:01:21Z-
dc.date.available2018-03-26T04:28:53Zen
dc.date.available2019-12-06T17:01:21Z-
dc.date.copyright2017en
dc.date.issued2017en
dc.identifier.citationLi, X., Wang, H., Qiao, Z., Guo, X., Ng, G. I., Zhang, Y., et al. (2017). Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser. Applied Physics Letters, 111(25), 251105-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/88353-
dc.identifier.urihttp://hdl.handle.net/10220/44613en
dc.description.abstractPassive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent4 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.rights© 2017 The Author(s) (published by AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The published version is available at: [http://dx.doi.org/10.1063/1.5010015]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectLaseren
dc.subjectQuantum Wellsen
dc.titleModal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laseren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.5010015en
dc.description.versionPublished versionen
dc.identifier.rims203994en
item.fulltextWith Fulltext-
item.grantfulltextopen-
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