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Title: Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector
Authors: Tobing, Landobasa Yosef Mario
Tong, Jinchao
Qiu, Shupeng
Zhang, Dao Hua
Unil Perera, A. G.
Keywords: Photodetectors
Middle Wavelength Infrared
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Tong, J., Tobing, L. Y. M., Qiu, S., Zhang, D. H., & Unil Perera, A. G. (2018). Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector. Applied Physics Letters, 113(1), 011110-. doi:10.1063/1.5018012
Series/Report no.: Applied Physics Letters
Abstract: Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides the possibility for MWIR photodetectors operating at room temperature. Here, we report a high sensitivity room temperature MWIR photodetector which is an InAs0.91Sb0.09-based heterojunction n-i-p photodiode integrated with a Au-based two-dimensional subwavelength hole array (2DSHA). A room temperature detectivity of 0.8 × 1010 cm Hz1/2 W−1 and a response time of 600 ns are achieved. The non-cooling high performance of 2DSHA-InAs0.91Sb0.09 based heterojunction photodetectors will make their applications easier, broader, and economic.
ISSN: 0003-6951
DOI: 10.1063/1.5018012
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
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