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Title: Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films
Authors: Lian, Jiqing
Zhang, Dawei
Hong, Ruijin
Qiu, Peizhen
Lv, Taiguo
Zhang, Daohua
Keywords: Epsilon-Near-Zero
DRNTU::Engineering::Electrical and electronic engineering
ITO Thin Films
Issue Date: 2018
Source: Lian, J., Zhang, D., Hong, R., Qiu, P., Lv, T., & Zhang, D. (2018). Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films. Nanomaterials, 8(11), 922-. doi:10.3390/nano8110922
Series/Report no.: Nanomaterials
Abstract: Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.
ISSN: 2079-4991
DOI: 10.3390/nano8110922
Schools: School of Electrical and Electronic Engineering 
Rights: © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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