Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88861
Title: GeSn lateral p-i-n photodetector on insulating substrate
Authors: Xu, Shengqiang
Huang, Yi-Chiau
Lee, Kwang Hong
Wang, Wei
Dong, Yuan
Lei, Dian
Masudy-Panah, Saeid
Tan, Chuan Seng
Gong, Xiao
Yeo, Yee-Chia
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Photodetectors
Diode Characteristics
Issue Date: 2018
Source: Xu, S., Huang, Y.-C., Lee, K. H., Wang, W., Dong, Y., Lei, D., . . . Yeo, Y.-C. (2018). GeSn lateral p-i-n photodetector on insulating substrate. Optics Express, 26(13), 17312-17321. doi:10.1364/OE.26.017312
Series/Report no.: Optics Express
Abstract: We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high Ion/Ioff ratio of ~4 orders of magnitude (at ± 1 V) at room temperature. A cutoff detection beyond 2 µm with photo responsivity (Rop) of 0.016 A/W was achieved at the wavelength (λ) of 2004 nm.
URI: https://hdl.handle.net/10356/88861
http://hdl.handle.net/10220/47645
ISSN: 1094-4087
DOI: 10.1364/OE.26.017312
Rights: © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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