Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88861
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dc.contributor.authorXu, Shengqiangen
dc.contributor.authorHuang, Yi-Chiauen
dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorWang, Weien
dc.contributor.authorDong, Yuanen
dc.contributor.authorLei, Dianen
dc.contributor.authorMasudy-Panah, Saeiden
dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorGong, Xiaoen
dc.contributor.authorYeo, Yee-Chiaen
dc.date.accessioned2019-02-12T08:15:07Zen
dc.date.accessioned2019-12-06T17:12:36Z-
dc.date.available2019-02-12T08:15:07Zen
dc.date.available2019-12-06T17:12:36Z-
dc.date.issued2018en
dc.identifier.citationXu, S., Huang, Y.-C., Lee, K. H., Wang, W., Dong, Y., Lei, D., . . . Yeo, Y.-C. (2018). GeSn lateral p-i-n photodetector on insulating substrate. Optics Express, 26(13), 17312-17321. doi:10.1364/OE.26.017312en
dc.identifier.issn1094-4087en
dc.identifier.urihttps://hdl.handle.net/10356/88861-
dc.description.abstractWe report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high Ion/Ioff ratio of ~4 orders of magnitude (at ± 1 V) at room temperature. A cutoff detection beyond 2 µm with photo responsivity (Rop) of 0.016 A/W was achieved at the wavelength (λ) of 2004 nm.en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent10 p.en
dc.language.isoenen
dc.relation.ispartofseriesOptics Expressen
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.subjectPhotodetectorsen
dc.subjectDiode Characteristicsen
dc.titleGeSn lateral p-i-n photodetector on insulating substrateen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchSingapore-MIT Alliance Programmeen
dc.identifier.doi10.1364/OE.26.017312en
dc.description.versionPublished versionen
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