Please use this identifier to cite or link to this item:
|Title:||Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate||Authors:||Tham, Wai Hoe
Ang, Diing Shenp
Bera, Lakshmi Kanta
Surani Bin Doimanan
Bhat, Thirumaleshwara N.
Kajen, Rasanayagam S.
Tan, Hui Ru
Teo, Siew Lang
DRNTU::Engineering::Electrical and electronic engineering
|Issue Date:||2016||Source:||Tham, W. H., Ang, D. S., Bera, L. K., Surani Bin Doimanan, Bhat, T. N., Kajen, R. S., Tan, H. R., et al. (2016). Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate. Journal of Vacuum Science & Technology B, 34(4), 041217-. doi:10.1116/1.4952403||Series/Report no.:||Journal of Vacuum Science & Technology B||Abstract:||The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme, the source/drain Ohmic contact optimization is accomplished through the variation of Ti/Al thickness ratio and thermal annealing conditions. For an optimized Ti/Al stack thickness (20/200 nm) annealed at 500 °C for 30 s with smooth contact surface morphology, a specific contact resistivity of ∼6.3 × 10−6 Ω cm2 is achieved. Furthermore, with gold-free Ni/Al gates, the fabricated HEMTs exhibit ION/IOFF ratio of ∼109 and a subthreshold swing of ∼71 mV/dec. The demonstrated gold-free contact schemes thus provide a solution toward the implementation of GaN-based HEMT process on a Si foundry platform.||URI:||https://hdl.handle.net/10356/89018
|ISSN:||2166-2746||DOI:||10.1116/1.4952403||Rights:||© 2016 Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). The published version is available at: [http://dx.doi.org/10.1116/1.4952403]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Gold-free contacts on AlxGa1-xN_GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate.pdf||2.07 MB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.