Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89018
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTham, Wai Hoeen
dc.contributor.authorAng, Diing Shenpen
dc.contributor.authorBera, Lakshmi Kantaen
dc.contributor.authorSurani Bin Doimananen
dc.contributor.authorBhat, Thirumaleshwara N.en
dc.contributor.authorKajen, Rasanayagam S.en
dc.contributor.authorTan, Hui Ruen
dc.contributor.authorTeo, Siew Langen
dc.contributor.authorTripathy, Sudhiranjanen
dc.date.accessioned2018-12-17T08:44:43Zen
dc.date.accessioned2019-12-06T17:16:02Z-
dc.date.available2018-12-17T08:44:43Zen
dc.date.available2019-12-06T17:16:02Z-
dc.date.issued2016en
dc.identifier.citationTham, W. H., Ang, D. S., Bera, L. K., Surani Bin Doimanan, Bhat, T. N., Kajen, R. S., Tan, H. R., et al. (2016). Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate. Journal of Vacuum Science & Technology B, 34(4), 041217-. doi:10.1116/1.4952403en
dc.identifier.issn2166-2746en
dc.identifier.urihttps://hdl.handle.net/10356/89018-
dc.identifier.urihttp://hdl.handle.net/10220/47018en
dc.description.abstractThe authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme, the source/drain Ohmic contact optimization is accomplished through the variation of Ti/Al thickness ratio and thermal annealing conditions. For an optimized Ti/Al stack thickness (20/200 nm) annealed at 500 °C for 30 s with smooth contact surface morphology, a specific contact resistivity of ∼6.3 × 10−6 Ω cm2 is achieved. Furthermore, with gold-free Ni/Al gates, the fabricated HEMTs exhibit ION/IOFF ratio of ∼109 and a subthreshold swing of ∼71 mV/dec. The demonstrated gold-free contact schemes thus provide a solution toward the implementation of GaN-based HEMT process on a Si foundry platform.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent8 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Vacuum Science & Technology Ben
dc.rights© 2016 Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). The published version is available at: [http://dx.doi.org/10.1116/1.4952403]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectElectrical Resistivityen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.subjectAluminiumen
dc.titleGold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrateen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1116/1.4952403en
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.