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Title: Efficient in-line skyrmion injection method for synthetic antiferromagnetic systems
Authors: Gan, Wei Liang
Krishnia, Sachin
Lew, Wen Siang
Keywords: Skyrmion
Magnetic Memory
Issue Date: 2018
Source: Gan, W. L., Krishnia, S., & Lew, W. S. (2018). Efficient in-line skyrmion injection method for synthetic antiferromagnetic systems. New Journal of Physics, 20(1), 013029-.
Series/Report no.: New Journal of Physics
Abstract: Although it has been proposed that antiferromagnetically-coupled skyrmions can be driven at extremely high speeds, such skyrmions are near impossible to inject with current methods. In this paper, we propose the use of DMI-induced edge magnetization tilting to perform in-line skyrmion injection in a synthetic antiferromagnetic branched nanostructure. The proposed method circumvents the skyrmion topological protection and lowers the required current density. By allowing additional domain walls (DWs) to form on the branch, the threshold injection current density was further reduced by 59%. The increased efficiency was attributed to inter-DW repulsion and DW compression. The former acts as a multiplier to the effective field experienced by the pinned DW while the latter allows DWs to accumulate enough energy for depinning. The branch geometry also enables skyrmions to be shifted and deleted with the use of only three terminals, thus acting as a highly scalable skyrmion memory block.
ISSN: 1367-2630
DOI: 10.1088/1367-2630/aaa113
Rights: © 2018 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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