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dc.contributor.authorLiu, Fucaien
dc.contributor.authorYou, Luen
dc.contributor.authorSeyler, Kyle L.en
dc.contributor.authorLi, Xiaobaoen
dc.contributor.authorYu, Pengen
dc.contributor.authorLin, Junhaoen
dc.contributor.authorWang, Xuewenen
dc.contributor.authorZhou, Jiadongen
dc.contributor.authorWang, Hongen
dc.contributor.authorHe, Haiyongen
dc.contributor.authorPantelides, Sokrates T.en
dc.contributor.authorZhou, Wuen
dc.contributor.authorSharma, Pradeepen
dc.contributor.authorXu, Xiaodongen
dc.contributor.authorAjayan, Pulickel M.en
dc.contributor.authorWang, Junlingen
dc.contributor.authorLiu, Zhengen
dc.identifier.citationLiu, F., You, L., Seyler, K. L., Li, X., Yu, P., Lin, J., et al. (2016). Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nature Communications, 7, 12357-.en
dc.description.abstractTwo-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent6 p.en
dc.relation.ispartofseriesNature Communicationsen
dc.rights© 2016 The Author(s) (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
dc.subjectFerroelectrics And Multiferroicsen
dc.subjectInformation Storageen
dc.titleRoom-temperature ferroelectricity in CuInP2S6 ultrathin flakesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchCentre for Programmable Materialsen
dc.contributor.researchNanoelectronics Centre of Excellenceen
dc.contributor.researchCINTRA CNRS/NTU/THALESen
dc.description.versionPublished versionen
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