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Title: Lead iodide perovskite light-emitting field-effect transistor
Authors: Chin, Xin Yu
Cortecchia, Daniele
Yin, Jun
Bruno, Annalisa
Soci, Cesare
Keywords: Solar Cells
Optoelectronic Devices and Components
Issue Date: 2015
Source: Chin, X. Y., Cortecchia, D., Yin, J., Bruno, A., & Soci, C. (2015). Lead iodide perovskite light-emitting field-effect transistor. Nature Communications, 6, 7383-. doi: 10.1038/ncomms8383
Series/Report no.: Nature Communications
Abstract: Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.
DOI: 10.1038/ncomms8383
Rights: © 2015 Macmillan Publishers Limited. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles
IGS Journal Articles
SPMS Journal Articles

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