Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89238
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dc.contributor.authorChin, Xin Yuen
dc.contributor.authorCortecchia, Danieleen
dc.contributor.authorYin, Junen
dc.contributor.authorBruno, Annalisaen
dc.contributor.authorSoci, Cesareen
dc.date.accessioned2018-10-01T05:37:32Zen
dc.date.accessioned2019-12-06T17:20:55Z-
dc.date.available2018-10-01T05:37:32Zen
dc.date.available2019-12-06T17:20:55Z-
dc.date.issued2015en
dc.identifier.citationChin, X. Y., Cortecchia, D., Yin, J., Bruno, A., & Soci, C. (2015). Lead iodide perovskite light-emitting field-effect transistor. Nature Communications, 6, 7383-. doi: 10.1038/ncomms8383en
dc.identifier.urihttps://hdl.handle.net/10356/89238-
dc.description.abstractDespite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent9 p.en
dc.language.isoenen
dc.relation.ispartofseriesNature Communicationsen
dc.rights© 2015 Macmillan Publishers Limited. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectSolar Cellsen
dc.subjectOptoelectronic Devices and Componentsen
dc.subjectDRNTU::Science::Physicsen
dc.titleLead iodide perovskite light-emitting field-effect transistoren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.schoolInterdisciplinary Graduate School (IGS)en
dc.contributor.researchCentre for Disruptive Photonic Technologiesen
dc.contributor.researchEnergy Research Institute @NTUen
dc.identifier.doi10.1038/ncomms8383en
dc.description.versionPublished versionen
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