Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89281
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dc.contributor.authorJia, Zhouen
dc.contributor.authorGe, Tongen
dc.contributor.authorGuo, Linfeien
dc.contributor.authorEileen, Ng Pei Jianen
dc.contributor.authorHe, Huiqiaoen
dc.contributor.authorChang, Josephen
dc.date.accessioned2018-10-02T09:17:23Zen
dc.date.accessioned2019-12-06T17:21:53Z-
dc.date.available2018-10-02T09:17:23Zen
dc.date.available2019-12-06T17:21:53Z-
dc.date.issued2016en
dc.identifier.citationJia, Z., Ge, T., Guo, L., Eileen, N. P. J., He, H., & Chang, J. (2016). A High Power Driver IC for Electroluminescent Panel: Design Challenges and Advantages of using the Emerging LEES-SMART GaN-on-CMOS process. Procedia Engineering, 141, 91-93. doi : 10.1016/j.proeng.2015.09.227en
dc.identifier.issn1877-7058en
dc.identifier.urihttps://hdl.handle.net/10356/89281-
dc.description.abstractThe Electroluminescent (EL) panel is an emerging backplane lighting technology and becoming increasingly popular in advertising display and facade decoration. Despite the increased popularity of the EL panel, driver circuit for large EL panel is nascent in part because of the required high output power. In this paper, a novel high power EL driver IC based on the emerging LEES-SMART GaN-on-CMOS process are presented and we show that this integrated class-D EL driver is advantageous compared to EL driver IC based on state-of-the-art silicon IC process.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesProcedia Engineeringen
dc.rights© 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0/). Selection and/or peer-review under responsibility of the scientific committee of Symposium 2015 ICMATen
dc.subjectDriver Circuiten
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.subjectElectroluminescent Panelen
dc.titleA high power driver IC for electroluminescent panel: design challenges and advantages of using the emerging LEES-SMART GAN-on-CMOS processen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1016/j.proeng.2015.09.227en
dc.description.versionPublished versionen
item.grantfulltextopen-
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