Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89420
Title: Wide-input dynamic range 1 MHz clock ultra-low supply flip-flop
Authors: Siek, Liter
Palaniappan, Arjun Ramaswami
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Wide-input Dynamic Range
Ultra-low Supply Voltage
Issue Date: 2018
Source: Palaniappan, A. R., & Siek, L. (2018). Wide-input dynamic range 1 MHz clock ultra-low supply flip-flop. Electronics Letters, 54(15), 938-939. doi:10.1049/el.2018.1134
Series/Report no.: Electronics Letters
Abstract: A new wide-input dynamic range flip-flop capable of operation at an ultra-low supply voltage of 0.16 V is presented. The proposed flip-flop named as capacitively boosted sense-amplifier flip-flop (CB-SAFF) utilises a capacitively boosted sense-amplifier master stage to sense the data signals and amplify them to a voltage higher than the supply and below the ground for driving the slave latch stage with improved strength. Using the same size of input/output transistors and load capacitance, the proposed CB-SAFF outperforms existing state-of-the-art sense-amplifier flip-flop designs at a low supply voltage operation from 0.16 to 0.6 V in terms of power delay product and clock to output propagation delay performance metrics. In addition, the proposed CB-SAFF can also sample low-swing data signals down to 0.2 V even at a 0.16 V supply voltage and 1 MHz clock frequency, thus making it highly suitable for applications that demand high speed and low power consumption such as for use in ultra-low voltage Internet of Things, wireless sensor nodes and smart motes.
URI: https://hdl.handle.net/10356/89420
http://hdl.handle.net/10220/46252
ISSN: 0013-5194
DOI: 10.1049/el.2018.1134
Schools: School of Electrical and Electronic Engineering 
Research Centres: VIRTUS, IC Design Centre of Excellence 
Rights: © 2018 The Institution of Engineering and Technology. This paper was published in Electronics Letters and is made available as an electronic reprint (preprint) with permission of The Institution of Engineering and Technology. The published version is available at: [http://dx.doi.org/10.1049/el.2018.1134]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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