Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89450
Full metadata record
DC FieldValueLanguage
dc.contributor.authorWong, Terence Kin Shunen
dc.contributor.authorZhuk, Siarheien
dc.contributor.authorMasudy-Panah, Saeiden
dc.contributor.authorDalapati, Goutam K.en
dc.date.accessioned2018-10-09T02:11:05Zen
dc.date.accessioned2019-12-06T17:25:47Z-
dc.date.available2018-10-09T02:11:05Zen
dc.date.available2019-12-06T17:25:47Z-
dc.date.issued2016en
dc.identifier.citationWong, T. K. S., Zhuk, S., Masudy-Panah, S., & Dalapati, G. K. (2016). Current status and future prospects of copper oxide heterojunction solar cells. Materials, 9(4), 271-. doi:10.3390/ma9040271en
dc.identifier.issn1996-1944en
dc.identifier.urihttps://hdl.handle.net/10356/89450-
dc.identifier.urihttp://hdl.handle.net/10220/46258en
dc.description.abstractThe current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.en
dc.format.extent21 p.en
dc.language.isoenen
dc.relation.ispartofseriesMaterialsen
dc.rights© 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons by Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.subjectSolar Cellen
dc.subjectCuprous Oxideen
dc.titleCurrent status and future prospects of copper oxide heterojunction solar cellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doihttp://dx.doi.org/10.3390/ma9040271en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.pdf5.54 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.