Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89450
Title: Current status and future prospects of copper oxide heterojunction solar cells
Authors: Wong, Terence Kin Shun
Zhuk, Siarhei
Masudy-Panah, Saeid
Dalapati, Goutam K.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Solar Cell
Cuprous Oxide
Issue Date: 2016
Source: Wong, T. K. S., Zhuk, S., Masudy-Panah, S., & Dalapati, G. K. (2016). Current status and future prospects of copper oxide heterojunction solar cells. Materials, 9(4), 271-. doi:10.3390/ma9040271
Series/Report no.: Materials
Abstract: The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.
URI: https://hdl.handle.net/10356/89450
http://hdl.handle.net/10220/46258
ISSN: 1996-1944
DOI: http://dx.doi.org/10.3390/ma9040271
Rights: © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons by Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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