Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89451
Title: Solution grown double heterostructure on large hybrid halide perovskite crystal
Authors: Hettiarachchi, Chathuranga
Birowosuto, Muhammad Danang
Nguyen, Tienhoa
Ahmad, Riyas
Pita, Kantisara
Mathews, Nripan
Dang, Cuong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Science::Chemistry::Crystallography::Crystal structure and growth
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2018
Source: Hettiarachchi, C., Birowosuto, M. D., Nguyen, T., Ahmad, R., Pita, K., Mathews, N., & Dang, C. (2018). Solution Grown Double Heterostructure on Large Hybrid Halide Perovskite Crystal. CrystEngComm. doi:10.1039/C8CE01298A
Series/Report no.: CrystEngComm
Abstract: Heterostructure is playing a crucial role in current optoelectronic applications. Realizing the heterostructure in a recently exciting semiconductor material: hybrid halide perovskite crystals, has been a long-sought goal in the field. Here, we demonstrate modulation-doped layer growth on large hybrid halide perovskite crystals. We show that the well known problem of halide ion inter-diffusion can be controlled by (1) using low halide composition gradient and (2) adjusting solution concentrations just above the critical supersaturation, in the solvo-thermal liquid-phase growth process. In comparison to few seconds dipping time previously reported for ion exchange processes, our layer growth time could be conveniently extended up to 80 minutes to grow a uniform and controllable layer, with a very thin inter-diffusion region. The growth of CH3NH3PbBr3 layer on top of CH3NH3Pb(Br0.85Cl0.15)3 bulk substrate is studied for different growth times to obtain up to 30µm layer thickness. Ion diffusion profile and layer thickness are verified respectively by cross sectional characterization using Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS). Electron Back-Scattering Diffraction (EBSD) suggests the similar crystallographic orientation for both substrate and grown layers. Our diffusion model illustrates the halide ion concentration at the interface, reflecting the EDS mapping results. Optical imaging and Photoluminescence (PL) characterization confirm the quality and the bandgap of the grown layers. Especially, the growth process is further extended for two consecutive layers to create a double heterostructure for the first time with a large perovskite crystal. Our low cost process could pave the way for many optoelectronic applications such as color tune-able light emitting diodes or photodetectors to be developed with perovskite crystals.
URI: https://hdl.handle.net/10356/89451
http://hdl.handle.net/10220/46257
DOI: 10.1039/C8CE01298A
Rights: © 2018 The Author(s) (Royal Society of Chemistry). This is the author created version of a work that has been peer reviewed and accepted for publication by Crystengcomm, The Author(s) (Royal Society of Chemistry). It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/C8CE01298A].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
ERI@N Journal Articles

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