Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/89529
Title: | Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers | Authors: | Shang, Jingzhi Cong, Chunxiao Wang, Zilong Peimyoo, Namphung Wu, Lishu Zou, Chenji Chen, Yu Chin, Xin Yu Wang, Jianpu Soci, Cesare Huang, Wei Yu, Ting |
Keywords: | Photoluminescence Scanning Electron Microscopy |
Issue Date: | 2017 | Source: | Shang, J., Cong, C., Wang, Z., Peimyoo, N., Wu, L., Zou, C., et al. (2017). Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers. Nature Communications, 8(1), 543-. | Series/Report no.: | Nature Communications | Abstract: | Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS2 was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers. | URI: | https://hdl.handle.net/10356/89529 http://hdl.handle.net/10220/44969 |
ISSN: | 2041-1723 | DOI: | 10.1038/s41467-017-00743-w | Schools: | School of Physical and Mathematical Sciences | Organisations: | NanjingTech-NTU Joint Center of Research and Development | Rights: | © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/ licenses/by/4.0/. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | SPMS Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers.pdf | 1.15 MB | Adobe PDF | View/Open |
SCOPUSTM
Citations
5
103
Updated on Mar 22, 2024
Web of ScienceTM
Citations
5
92
Updated on Oct 26, 2023
Page view(s) 50
562
Updated on Mar 27, 2024
Download(s) 50
109
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.