Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89628
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dc.contributor.authorPrakash, Abhinaven
dc.contributor.authorXu, Pengen
dc.contributor.authorFaghaninia, Alirezaen
dc.contributor.authorShukla, Sudhanshuen
dc.contributor.authorAger III, Joel W.en
dc.contributor.authorLo, Cynthia S.en
dc.contributor.authorJalan, Bharaten
dc.date.accessioned2018-06-07T07:10:18Zen
dc.date.accessioned2019-12-06T17:29:51Z-
dc.date.available2018-06-07T07:10:18Zen
dc.date.available2019-12-06T17:29:51Z-
dc.date.issued2017en
dc.identifier.citationPrakash, A., Xu, P., Faghaninia, A., Shukla, S., Ager III, J. W., Lo, C. S., et al. (2017). Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1. Nature Communications, 8, 15167-.en
dc.identifier.urihttps://hdl.handle.net/10356/89628-
dc.identifier.urihttp://hdl.handle.net/10220/44988en
dc.description.abstractWide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent9 p.en
dc.language.isoenen
dc.relation.ispartofseriesNature Communicationsen
dc.rights© 2017 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectSemiconductorsen
dc.subjectSuperconducting Devicesen
dc.titleWide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1en
dc.typeJournal Articleen
dc.contributor.schoolInterdisciplinary Graduate School (IGS)en
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.contributor.researchEnergy Research Institute @NTUen
dc.identifier.doi10.1038/ncomms15167en
dc.description.versionPublished versionen
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