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|Title:||Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations||Authors:||Wang, Yong
Goh, Wang Ling
Chai, Kevin T.-C.
|Keywords:||Lamb Wave Resonator
DRNTU::Engineering::Electrical and electronic engineering
|Issue Date:||2016||Source:||Wang, Y., Goh, W. L., Chai, K. T.-C., Mu, X., Hong, Y., Kropelnicki, P., & Je, M. (2016). Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations. Review of Scientific Instruments, 87(4), 045004-. doi:10.1063/1.4945801||Series/Report no.:||Review of Scientific Instruments||Abstract:||The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.||URI:||https://hdl.handle.net/10356/89725
|ISSN:||0034-6748||DOI:||10.1063/1.4945801||Rights:||© 2016 The Author(s) (Published by AIP). This paper was published in Review of Scientific Instruments and is made available as an electronic reprint (preprint) with permission of The Author(s) (Published by AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4945801]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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