Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89762
Title: Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack
Authors: Kawashima, T.
Yew, K. S.
Kyuno, K.
Zhou, Yu
Ang, Diing Shenp
Zhang, H. Z.
Keywords: Infrared Spectra
Dielectrics
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Zhang, H. Z., & Kyuno, K. (2018). Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack. Applied Physics Letters, 112(21), 213505-. doi:10.1063/1.5031053
Series/Report no.: Applied Physics Letters
Abstract: We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost unchanged. Besides, the Ar plasma treatment suppresses the negative photoconductivity or optical resistance reset effect, where the electrically formed filamentary conductive path consisting of Cu-ion and oxygen-vacancy clusters is disrupted by the recombination of the oxygen vacancies with nearby light-excited oxygen ions. From the enhanced O-H peak in the Fourier-transform infrared spectrum of the plasma-treated oxide, it is proposed that the Ar plasma has created more oxygen vacancies in the surface region of the oxide. These vacancies in turn adsorb water molecules, which act as counter anions (OH-) promoting the migration of Cu cations into the oxide and forming a more complete Cu filament that is less responsive to light. The finding points to the prospect of a control over the optical resistance reset effect by a simple surface treatment step.
URI: https://hdl.handle.net/10356/89762
http://hdl.handle.net/10220/46363
ISSN: 0003-6951
DOI: 10.1063/1.5031053
Rights: © 2018 The Author(s) (Published by AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of The Author(s) (Published by AIP). The published version is available at: [http://dx.doi.org/10.1063/1.5031053]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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