Please use this identifier to cite or link to this item:
Title: Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier
Authors: Mishra, Akhilesh Kumar
Khanonkin, I.
Eisenstein, G.
Lorke, M.
Michael, S.
Jahnke, F.
Reithmaier, J. P.
Keywords: Semiconductor Lasers
Optical Parametric Oscillators & Amplifiers
Issue Date: 2018
Source: Khanonkin, I., Eisenstein, G., Lorke, M., Michael, S., Jahnke, F., Mishra, A. K., & Reithmaier, J. P. (2018). Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier. Physical Review B, 98(12), 125307-. doi:10.1103/PhysRevB.98.125307
Series/Report no.: Physical Review B
Abstract: The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broadband carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55μm. Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well–injection well states. The hybrid state, which is placed energetically roughly one longitudinal optic phonon above the ground state and has a spectral extent of about 5meV, dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200mA, the entire spectrum exhibits gain; at 30mA, the system exhibits a mixed gain-absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates.
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.98.125307
Rights: © 2018 American Physical Society (APS). This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

Files in This Item:
File Description SizeFormat 
Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier.pdf1.3 MBAdobe PDFThumbnail

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.