Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90024
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dc.contributor.authorDeki, M.en
dc.contributor.authorNitta, S.en
dc.contributor.authorHonda, Y.en
dc.contributor.authorAmano, H.en
dc.contributor.authorSandupatla, Abhinayen
dc.contributor.authorArulkumaran, Subramanianen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorRanjan, Kumuden
dc.date.accessioned2019-07-16T05:44:53Zen
dc.date.accessioned2019-12-06T17:38:58Z-
dc.date.available2019-07-16T05:44:53Zen
dc.date.available2019-12-06T17:38:58Z-
dc.date.issued2019en
dc.identifier.citationSandupatla, A., Arulkumaran, S., Ng, G. I., Ranjan, K., Deki, M., Nitta, S., . . . Amano, H. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances, 9(4), 045007-. doi:10.1063/1.5087491en
dc.identifier.urihttps://hdl.handle.net/10356/90024-
dc.description.abstractVertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heights (ΦB) in the range of 0.73 eV to 0.81 eV. The effective barrier heights (ΦBeff) of SBDs with different DLT also exhibited a similar range of ΦB measured at room temperature. The measured reverse breakdown voltages (VBD) of SBDs increased from 562 V to 2400 V with an increase in DLT. The observation of high VBD of SBDs could be due to the lower effective donor concentration (7.6×1014 /cm3), which was measured from SIMS analysis. The measured VBD of 2400 V is the highest value ever reported for a 30 μm DLT vertical GaN SBD without additional edge termination or field plate (FP).en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesAIP Advancesen
dc.rights© 2019 The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.subjectI-V characteristicsen
dc.subjectEpitaxyen
dc.subjectEngineering::Electrical and electronic engineeringen
dc.titleGaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substratesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1063/1.5087491en
dc.description.versionPublished versionen
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