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Title: Remote plasma-assisted low-temperature large-area graphene synthesis
Authors: Pae, Jian Yi
Medwal, Rohit
Vas, Joseph Vimal
Matham, Murukeshan Vadakke
Rawat, Rajdeep Singh
Keywords: Graphene
Engineering::Mechanical engineering
Plasma Processing
Issue Date: 2019
Source: Pae, J. Y., Medwal, R., Vas, J. V., Matham, M. V., & Rawat, R. S. (2019). Remote plasma-assisted low-temperature large-area graphene synthesis. Journal of Vacuum Science & Technology B, 37(4), 041201-. doi:10.1116/1.5093241
Series/Report no.: Journal of Vacuum Science and Technology B
Abstract: Graphene is typically grown using thermal chemical vapor deposition (CVD) on metallic substrates such as copper and nickel at elevated temperatures above 1000 °C. The synthesis of large-area graphene at low temperature is highly desirable for large volume industrial production. In this paper, the authors report a remote plasma-assisted CVD graphene synthesis at a reduced temperature of 600 °C in a relatively shorter duration of 15 min. Scanning electron microscopy reveals the formation of large graphene crystal with an approximate size of 100 × 100 μm2 over the entire 2 × 10 cm2 surface of copper foil substrates. Raman spectra recorded for graphene grown at 600 °C show the presence of a graphene characteristic “2D” peak, attesting to the formation of graphene. The results show that it is possible to grow horizontal graphene at low temperatures and transfer it to flexible polyethylene terephthalate substrates. The utility of the synthesized graphene is ascertained through the successful fabrication of a flexible graphene-based electrochemical sensor for the detection of glucose concentration. The present research will have a direct impact on flexible wearable biosensors.
ISSN: 2166-2746
DOI: 10.1116/1.5093241
Rights: © 2019 American Vacuum Society. All rights reserved. This paper was published in Journal of Vacuum Science and Technology B and is made available with permission of American Vacuum Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Journal Articles

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