Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90129
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dc.contributor.authorLi, Weien
dc.date.accessioned2019-05-27T08:40:04Zen
dc.date.accessioned2019-12-06T17:41:21Z-
dc.date.available2019-05-27T08:40:04Zen
dc.date.available2019-12-06T17:41:21Z-
dc.date.issued2019en
dc.identifier.citationLi, W. (2019). A novel germanium-on-silicon nitride platform for Mid-IR sensing. Doctoral thesis, Nanyang Technological University, Singapore.en
dc.identifier.urihttps://hdl.handle.net/10356/90129-
dc.description.abstractIn recent years, the wavelength range over which silicon photonics can operate has been extended to the mid-infrared (IR) regions (2 to 20 μm). Since many molecules and substances have their specific absorption peaks in the Mid-IR range, this has provided us with a good opportunity to use silicon photonic device as a sensor to trace elements of chemicals in either gas, liquid or solid phases. In addition, Mid-IR also has many potential applications in free space data communication, IR imaging of biological tissues, spectroscopy and many others.en
dc.format.extent155 p.en
dc.language.isoenen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleA novel germanium-on-silicon nitride platform for Mid-IR sensingen
dc.typeThesisen
dc.contributor.supervisorTan Chuan Sengen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.degreeDoctor of Philosophyen
dc.identifier.doi10.32657/10220/48387en
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