A novel germanium-on-silicon nitride platform for Mid-IR sensing

Abstract

In recent years, the wavelength range over which silicon photonics can operate has been extended to the mid-infrared (IR) regions (2 to 20 μm). Since many molecules and substances have their specific absorption peaks in the Mid-IR range, this has provided us with a good opportunity to use silicon photonic device as a sensor to trace elements of chemicals in either gas, liquid or solid phases. In addition, Mid-IR also has many potential applications in free space data communication, IR imaging of biological tissues, spectroscopy and many others.