Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90137
Title: Topological insulator laser : theory
Authors: Chong, Yi Dong
Harari, Gal
Bandres, Miguel A.
Lumer, Yaakov
Rechtsman, Mikael C.
Khajavikhan, Mercedeh
Christodoulides, Demetrios N.
Segev, Mordechai
Keywords: DRNTU::Science::Physics
Topological Insulator
Laser
Issue Date: 2018
Source: Harari, G., Bandres, M. A., Lumer, Y., Rechtsman, M. C., Chong, Y. D., Khajavikhan, M., . . . Segev, M. (2018). Topological insulator laser : theory. Science, 359(6381), eaar4003-. doi:10.1126/science.aar4003
Series/Report no.: Science
Abstract: Topological insulators are phases of matter characterized by topological edge states that propagate in a unidirectional manner that is robust to imperfections and disorder. These attributes make topological insulator systems ideal candidates for enabling applications in quantum computation and spintronics. We propose a concept that exploits topological effects in a unique way: the topological insulator laser. These are lasers whose lasing mode exhibits topologically protected transport without magnetic fields. The underlying topological properties lead to a highly efficient laser, robust to defects and disorder, with single-mode lasing even at very high gain values. The topological insulator laser alters current understanding of the interplay between disorder and lasing, and at the same time opens exciting possibilities in topological physics, such as topologically protected transport in systems with gain. On the technological side, the topological insulator laser provides a route to arrays of semiconductor lasers that operate as one single-mode high-power laser coupled efficiently into an output port.
URI: https://hdl.handle.net/10356/90137
http://hdl.handle.net/10220/48415
ISSN: 0036-8075
DOI: 10.1126/science.aar4003
Rights: © 2017 The Author(s). All rights reserved. This paper was published by American Association for the Advancement of Science (AAAS) in Science and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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