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|Title:||Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding||Authors:||Abdul Kadir
Lee, Kenneth E.
Tan, Chuan Seng
Chua, Soo Jin
Fitzgerald, Eugene A.
Lee, Kwang Hong
DRNTU::Engineering::Electrical and electronic engineering
|Issue Date:||2018||Source:||Zhang, L., Lee, K. H., Abdul Kadir., Wang, Y., Lee, K. E., Tan, C. S., . . . Fitzgerald, E. A. (2018). Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding. Japanese Journal of Applied Physics, 57(5), 051002-. doi:10.7567/JJAP.57.051002||Series/Report no.:||Japanese Journal of Applied Physics||Abstract:||Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.||URI:||https://hdl.handle.net/10356/90142
|ISSN:||0021-4922||DOI:||10.7567/JJAP.57.051002||Rights:||© 2018 The Japan Society of Applied Physics. All rights reserved. This paper was published in Japanese Journal of Applied Physics and is made available with permission of The Japan Society of Applied Physics.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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