Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90142
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dc.contributor.authorAbdul Kadiren
dc.contributor.authorWang, Yueen
dc.contributor.authorLee, Kenneth E.en
dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorChua, Soo Jinen
dc.contributor.authorFitzgerald, Eugene A.en
dc.contributor.authorZhang, Lien
dc.contributor.authorLee, Kwang Hongen
dc.date.accessioned2019-05-28T06:05:33Zen
dc.date.accessioned2019-12-06T17:41:42Z-
dc.date.available2019-05-28T06:05:33Zen
dc.date.available2019-12-06T17:41:42Z-
dc.date.issued2018en
dc.identifier.citationZhang, L., Lee, K. H., Abdul Kadir., Wang, Y., Lee, K. E., Tan, C. S., . . . Fitzgerald, E. A. (2018). Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding. Japanese Journal of Applied Physics, 57(5), 051002-. doi:10.7567/JJAP.57.051002en
dc.identifier.issn0021-4922en
dc.identifier.urihttps://hdl.handle.net/10356/90142-
dc.identifier.urihttp://hdl.handle.net/10220/48410en
dc.description.abstractCrack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent16 p.en
dc.language.isoenen
dc.relation.ispartofseriesJapanese Journal of Applied Physicsen
dc.rights© 2018 The Japan Society of Applied Physics. All rights reserved. This paper was published in Japanese Journal of Applied Physics and is made available with permission of The Japan Society of Applied Physics.en
dc.subjectSi CMOSen
dc.subjectAlGaN Layersen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleCurvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bondingen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.7567/JJAP.57.051002en
dc.description.versionAccepted versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
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