Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/90154
Title: | Electrolyte gated oxide pseudodiode for inhibitory synapse applications | Authors: | Fu, Yang Ming Wan, Chang Jin Yu, Fei Xiao, Hui Tao, Jian Guo, Yan Bo Gao, Wan Tian Zhu, Li Qiang |
Keywords: | Low Power Dissipation Electric-double-layer Transistors Engineering::Materials |
Issue Date: | 2018 | Source: | Fu, Y. M., Wan, C. J., Yu, F., Xiao, H., Tao, J., Guo, Y. B., . . . Zhu, L. Q. (2018). Electrolyte gated oxide pseudodiode for inhibitory synapse applications. Advanced Electronic Materials, 4(11), 1800371-. doi:10.1002/aelm.201800371 | Series/Report no.: | Advanced Electronic Materials | Abstract: | Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as ≈16 fJ for triggering a postsynaptic current with high signal‐to‐noise ratio of ≈2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode‐based inhibitory artificial synapses may find potential applications in neuromorphic platforms. | URI: | https://hdl.handle.net/10356/90154 http://hdl.handle.net/10220/50471 |
DOI: | 10.1002/aelm.201800371 | Schools: | School of Materials Science & Engineering | Rights: | This is the peer reviewed version of the following article: Fu, Y. M., Wan, C. J., Yu, F., Xiao, H., Tao, J., Guo, Y. B., . . . Zhu, L. Q. (2018). Electrolyte gated oxide pseudodiode for inhibitory synapse applications. Advanced Electronic Materials, 4(11), 1800371-, which has been published in final form at https://doi.org/10.1002/aelm.201800371. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Journal Articles |
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Electrolyte Gated Oxide Pseudo-Diode for Inhibitory Synapse Applications.pdf | 676.65 kB | Adobe PDF | View/Open |
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