Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90207
Title: Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
Authors: Wang, Bing
Wang, Cong
Lee, Kwang Hong
Bao, Shuyu
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Fitzgerald, Eugene A.
Michel, Jurgen
Keywords: Ge-on-Si Substrate
InGaP LEDs
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2016
Source: Wang, B., Wang, C., Lee, K. H., Bao, S., Lee, K. E. K., Tan, C. S., . . . Michel, J. (2016). Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 9768, 97681J-. doi:10.1117/12.2211562
Abstract: The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8’’ Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 106/cm2 by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8’’ Ge-on-Si substrates and characterized.
URI: https://hdl.handle.net/10356/90207
http://hdl.handle.net/10220/47211
DOI: 10.1117/12.2211562
Rights: © 2016 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/12.2211562]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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