Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90234
Title: Electrical and thermal models of CNT TSV and graphite interface
Authors: Vaisband, Boris
Maurice, Ange
Tan, Chong Wei
Tay, Beng Kang
Friedman, Eby G.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Carbon Nanotubes
3-D IC
Issue Date: 2018
Source: Vaisband, B., Maurice, A., Tan, C. W., Tay, B. K., & Friedman, E. G. (2018). Electrical and thermal models of CNT TSV and graphite interface. IEEE Transactions on Electron Devices, 65(5), 1880-1886. doi:10.1109/TED.2018.2812761
Series/Report no.: IEEE Transactions on Electron Devices
Abstract: Carbon nanotubes (CNTs) are a suitable replacement for metals commonly used as a fill material for through substrate vias (TSVs). The electrical and thermal contact resistance, however, between the CNT TSVs and the horizontal metal interconnects (typically copper) can limit the use of CNT technology. A replacement for the horizontal metal interconnects in the form of graphite material is proposed in this paper. Electrical and thermal models of the interface between CNT TSVs and graphite interconnect are compared to the interface between CNT TSVs and copper interconnect. The proposed models include electrical and thermal crowding effects as well as the skin effect. The CNT/graphite interface exhibits up to 72.6% and 71.9%, respectively, lower electrical and thermal resistance as compared to the CNT/copper interface.
URI: https://hdl.handle.net/10356/90234
http://hdl.handle.net/10220/48534
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2812761
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TED.2018.2812761
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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