Please use this identifier to cite or link to this item:
|Title:||Optical characteristics of 1.55 μm GaInNAs multi-quantum wells||Authors:||Sun, Handong
Dawson, M. D.
Qiu, Y. N.
Rorison, J. M.
Clark, Antony H.
Liu, H. Y.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2004||Source:||Sun, H. D., Clark, A. H., Liu, H. Y., Hopkinson, M., Calvez, S., Dawson, M. D., et al. (2004). Optical characteristics of 1.55 mm GaInNAs multi-quantum wells. Applied Physics Letters, 85(18), 4013-4015.||Series/Report no.:||Applied Physics Letters.||Abstract:||We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 mum optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs.||URI:||https://hdl.handle.net/10356/90379
|ISSN:||0003-6951||DOI:||10.1063/1.1812371||Rights:||Applied Physics Letters © copyright 2004 American Institute of Physics. The journal's website is located at http://apl.aip.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.