Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90380
Title: Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers
Authors: Clark, Antony H.
Macaluso, Roberto
Calvez, Stephane
Laurand, N.
Sun, Handong
Dawson, M. D.
Jouhti, Tomi
Kontinnen, Janne
Markus, Pessa
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2004
Source: Clark, A. H., Macaluso, R., Calvez, S., Laurand, N., Sun, H. D., Dawson, M. D., et al. (2004). Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878-883.
Series/Report no.: IEEE Journal of Quantum Electronics.
Abstract: We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
URI: https://hdl.handle.net/10356/90380
http://hdl.handle.net/10220/4564
ISSN: 0018-9197
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Fulltext Permission: open
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