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Title: Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy
Authors: Sun, Handong
Calvez, Stephane
Clark, Antony H.
Dawson, M. D.
Qiu, Y. N.
Rorison, J. M.
Kim, K. S.
Kim, T.
Park, Y. J.
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2005
Source: Sun, H. D., Clark, A. H., Calvez, S. , Dawson, M. D., Qiu, Y. N., Rorison, J. M., et al. (2005). Spectroscopic characterization of 1.3 mm GaInNAs quantum well structures grown by metal-organical vapour phase epitaxy. Applied Physics Letters, 86(9), 1-3.
Series/Report no.: Applied Physics Letters.
Abstract: We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
ISSN: 0003-6951
DOI: 10.1063/1.1868866
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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