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|Title:||Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy||Authors:||Sun, Handong
Clark, Antony H.
Dawson, M. D.
Qiu, Y. N.
Rorison, J. M.
Kim, K. S.
Park, Y. J.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2005||Source:||Sun, H. D., Clark, A. H., Calvez, S. , Dawson, M. D., Qiu, Y. N., Rorison, J. M., et al. (2005). Spectroscopic characterization of 1.3 mm GaInNAs quantum well structures grown by metal-organical vapour phase epitaxy. Applied Physics Letters, 86(9), 1-3.||Series/Report no.:||Applied Physics Letters.||Abstract:||We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.||URI:||https://hdl.handle.net/10356/90456
|ISSN:||0003-6951||DOI:||10.1063/1.1868866||Rights:||Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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