Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90509
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dc.contributor.authorDing, Liangen
dc.contributor.authorLiu, Yangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorCen, Zhan Hongen
dc.contributor.authorWong, Jen Iten
dc.contributor.authorYang, Mingen
dc.contributor.authorLiu, Zhenen
dc.contributor.authorGoh, Wei Pengen
dc.contributor.authorZhu, Fu Rongen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2010-09-07T07:07:57Zen
dc.date.accessioned2019-12-06T17:48:57Z-
dc.date.available2010-09-07T07:07:57Zen
dc.date.available2019-12-06T17:48:57Z-
dc.date.copyright2009en
dc.date.issued2009en
dc.identifier.citationCen, Z. H., Chen, T. P., Ding, L., Liu, Y., Wong, J. I., Yang, M., et al. (2009). Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions. Applied Physics Letters, 94, 1-3.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/90509-
dc.description.abstractStrong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100  degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materialsen
dc.titleStrong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ionsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Materials Research and Engineeringen
dc.identifier.doi10.1063/1.3068002en
dc.description.versionPublished versionen
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item.grantfulltextopen-
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