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https://hdl.handle.net/10356/90509
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ding, Liang | en |
dc.contributor.author | Liu, Yang | en |
dc.contributor.author | Chen, Tupei | en |
dc.contributor.author | Cen, Zhan Hong | en |
dc.contributor.author | Wong, Jen It | en |
dc.contributor.author | Yang, Ming | en |
dc.contributor.author | Liu, Zhen | en |
dc.contributor.author | Goh, Wei Peng | en |
dc.contributor.author | Zhu, Fu Rong | en |
dc.contributor.author | Fung, Stevenson Hon Yuen | en |
dc.date.accessioned | 2010-09-07T07:07:57Z | en |
dc.date.accessioned | 2019-12-06T17:48:57Z | - |
dc.date.available | 2010-09-07T07:07:57Z | en |
dc.date.available | 2019-12-06T17:48:57Z | - |
dc.date.copyright | 2009 | en |
dc.date.issued | 2009 | en |
dc.identifier.citation | Cen, Z. H., Chen, T. P., Ding, L., Liu, Y., Wong, J. I., Yang, M., et al. (2009). Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions. Applied Physics Letters, 94, 1-3. | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | https://hdl.handle.net/10356/90509 | - |
dc.description.abstract | Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. | en |
dc.format.extent | 3 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Applied physics letters | en |
dc.rights | Applied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no. | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | en |
dc.title | Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.organization | A*STAR Institute of Materials Research and Engineering | en |
dc.identifier.doi | 10.1063/1.3068002 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions.pdf | 345.65 kB | Adobe PDF | View/Open |
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