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Title: Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
Authors: Lu, T. M.
Law, S. B.
Chen, Z.
Ee, Elden Yong Chiang
Dong, Zhili
Keywords: DRNTU::Engineering::Materials
Issue Date: 2006
Source: Ee, E. Y. C., Chen, Z., Lu, T. M., Dong, Z. L., & Law, S. B. (2006). Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films. Electrochemical and solid state letters, 9(3).
Series/Report no.: Electrochemical and solid state letters
Abstract: Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, and Si-N-O compounds are formed. High-resolution-transmission-electron-microscopy reveals that the film consists of Ti-N, Si-N, Ti-Si nanocrystals embedded in an amorphous Ti-O, Si-O, and Si-N-O matrix. This type of microstructure gives rise to very high stability against copper diffusion under bias temperature stressing (BTS) compared to binary barrier materials. The BTS result shows that Ti24Si12N35O29 film can effectively block copper ion diffusion for up to 200°C at 0.5 MV/cm.
DOI: 10.1149/1.2166510
Rights: © 2006 The Electrochemical Society. This paper was published in Electrochemical and Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following DOI: 10.1149/1.2166510. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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