Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90576
Title: Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
Authors: Cui, Guangda
Lee, Pooi See
Chi, Dong Zhi
Chin, Yoke King
Hoe, Keat Mun
Tan, Eu Jin
Pey, Kin Leong
Singh, Navab
Lo, Guo-Qiang
Keywords: DRNTU::Engineering::Materials
Issue Date: 2008
Source: Tan, E. J., Pey, K. L., Singh, N., Lo, G., Q., Chi, D. Z., Chin, Y. K., et al. (2008). Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/drain and Silicon Nanowire Channel. IEEE Electron Device Letters, 29(10), 1167-1170.
Series/Report no.: IEEE electron device letters
Abstract: We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky transistors show acceptable drive current ~900 μA/μm and high Ion/Ioff ratio (~105). This is attributed to the improved carrier injection as a result of low Schottky barrier height (Φb) of ErSi2−x/n − Si(~0.3 eV) and the nanometer-sized (~8 nm) Schottky junction. The carrier transport is found to be dominated by the metal–semiconductor interface instead of the channel body speculated from the channel length independent behavior of the devices. Furthermore, the transistors exhibit ambipolar characteristics, which are modeled using thermionic/ thermionic-field emission for positive and thermionic-field emission for negative gate biases.
URI: https://hdl.handle.net/10356/90576
http://hdl.handle.net/10220/8343
DOI: 10.1109/LED.2008.2004508
Rights: © 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2008.2004508.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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