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https://hdl.handle.net/10356/90586
Title: | Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams | Authors: | Ng, Chi Yung Chen, Tupei Zhao, P. Ding, Liang Liu, Yang Tseng, Ampere A. Fung, Stevenson Hon Yuen |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics | Issue Date: | 2006 | Source: | Ng, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3. | Series/Report no.: | Journal of applied physics | Abstract: | A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also. | URI: | https://hdl.handle.net/10356/90586 http://hdl.handle.net/10220/6426 |
ISSN: | 0021-8979 | DOI: | 10.1063/1.2191737 | Rights: | Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v99/i10/p106105_s1?isAuthorized=no | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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