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|Title:||Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams||Authors:||Ng, Chi Yung
Tseng, Ampere A.
Fung, Stevenson Hon Yuen
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2006||Source:||Ng, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3.||Series/Report no.:||Journal of applied physics||Abstract:||A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.||URI:||https://hdl.handle.net/10356/90586
|ISSN:||0021-8979||DOI:||10.1063/1.2191737||Rights:||Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v99/i10/p106105_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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