Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90597
Title: Nanoscale polarization relaxation of epitaxial BiFeO3 thin film
Authors: Chen, Weigang
You, Lu
Chen, Gaofeng
Chua, Ngeah Theng
Guan, Ong Hock
Zou, Xi
Wang, Junling
Chen, Lang
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2010
Source: Chen, W., You, L., Chen, G., Chua, N. T., Guan, O. H., Zou, X., & et al. (2010). Nanoscale polarization relaxation of epitaxial BiFeO3 thin film. Thin Solid Films, 518(24), 169-173.
Series/Report no.: Thin solid films
Abstract: The polarization relaxation phenomena in a 40-nm-thick epitaxial BiFeO3 thin film grown on a (001) SrTiO3 substrate with SrRuO3 bottom electrode, was studied in nanoscale using dual-frequency resonance-tracking piezoresponse force microscopy. The as-grown film shows highly irregular mosaic domain pattern. The nucleation of reversed domains followed by domain wall propagation and domain coalesce was observed during relaxations. The polarization relaxation follows a stretched exponential model f = 1 - e^(-k(t-t0)^n) with parameters t0 = 2894 s, n =0.50 and k =6.04e-4. Local polar defects act as nucleation centers and the time-dependent depolarization field is the driving force for polarization relaxation.
URI: https://hdl.handle.net/10356/90597
http://hdl.handle.net/10220/7400
DOI: 10.1016/j.tsf.2010.03.089
Rights: © 2010 Elsevier  This is the author created version of a work that has been peer reviewed and accepted for publication by Nanoscale polarization relaxation of epitaxial BiFeO3 thin film, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1016/j.tsf.2010.03.089
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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