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Title: Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay
Authors: Tseng, Ampere A.
Ng, Chi Yung
Chen, Tupei
Tse, Man Siu
Fung, Stevenson Hon Yuen
Lim, Vanissa Sei Wei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2005
Source: Tseng, A. A., Ng, C. Y., Chen, T. P., Tse, M. S., Fung, S. H. Y., & Lim, V. S. W. (2005). Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay. Applied Physics Letters, 86, 1-3.
Series/Report no.: Applied physics letters
Abstract: Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si.
ISSN: 0003-6951
DOI: 10.1063/1.1901831
Schools: School of Electrical and Electronic Engineering 
Organisations: A*STAR Institute of Microelectronics
Rights: Applied Physics Letters © 2005 American Institute of Physics. The journal's website is located at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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