Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTseng, Ampere A.en
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorChen, Tupeien
dc.contributor.authorTse, Man Siuen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.contributor.authorLim, Vanissa Sei Weien
dc.identifier.citationTseng, A. A., Ng, C. Y., Chen, T. P., Tse, M. S., Fung, S. H. Y., & Lim, V. S. W. (2005). Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay. Applied Physics Letters, 86, 1-3.en
dc.description.abstractInfluence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si.en
dc.format.extent3 p.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © 2005 American Institute of Physics. The journal's website is located at
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleInfluence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decayen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Microelectronicsen
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.