Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90605
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dc.contributor.authorNg, Chi Yungen
dc.contributor.authorChen, Tupeien
dc.contributor.authorYang, Mingen
dc.contributor.authorYang, Jian Boen
dc.contributor.authorDing, Liangen
dc.contributor.authorLi, Chang Mingen
dc.contributor.authorDu, A.en
dc.contributor.authorTrigg, Alastair Daviden
dc.date.accessioned2010-09-07T08:27:13Zen
dc.date.accessioned2019-12-06T17:50:44Z-
dc.date.available2010-09-07T08:27:13Zen
dc.date.available2019-12-06T17:50:44Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationNg, C. Y., Chen, T. P., Yang, M., Yang, J. B., Ding, L., Li, C. M., et al. (2006). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. IEEE Transactions on Electron Devices, 53(4), 663-667.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/90605-
dc.identifier.urihttp://hdl.handle.net/10220/6427en
dc.description.abstractA nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented.en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleImpact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystalsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Microelectronicsen
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2006.870281en
dc.description.versionPublished versionen
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