Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90677
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dc.contributor.authorMa, Kaixueen
dc.contributor.authorZhang, Leyuen
dc.contributor.authorYeo, Kiat Sengen
dc.date.accessioned2010-05-25T01:08:20Zen
dc.date.accessioned2019-12-06T17:52:01Z-
dc.date.available2010-05-25T01:08:20Zen
dc.date.available2019-12-06T17:52:01Z-
dc.date.copyright2009en
dc.date.issued2009en
dc.identifier.citationMa, K., Zhang, L., & Yeo, K. S. (2009). Passive circuit designs toward terahertz using nanometer CMOS technology. Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium (pp.671-674).en
dc.identifier.urihttps://hdl.handle.net/10356/90677-
dc.description.abstractThis paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit and fullwave electromagnetic results show that the proposed bandpass filter has a wide passband of 100~150GHz and a return loss of better than 14dB. The designed power divider can operate at 500GHz which is the first reported design using a 180nm CMOS process.en
dc.format.extent5 p.en
dc.language.isoenen
dc.rights© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titlePassive circuit designs toward terahertz using nanometer CMOS technologyen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceIEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore)en
dc.identifier.openurlhttp://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+Allen
dc.identifier.openurlhttp://www.isic2009.org/en
dc.description.versionPublished versionen
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