Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90683
Title: Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
Authors: Zhao, P.
Liu, Yang
Chen, Tupei
Zhang, Sam
Fu, Yong Qing
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2005
Source: Zhao, P., Liu, Y., Chen, T. P., Zhang, S., Fu, Y. Q., & Fung, S. H. Y. (2005). Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering. Applied Physics Letters 87, 1-3.
Series/Report no.: Applied physics letters
Abstract: Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and Nitrogen gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10^−6 s causes a flatband voltage shift of ∼ 1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.
URI: https://hdl.handle.net/10356/90683
http://hdl.handle.net/10220/6357
ISSN: 0003-6951
DOI: 10.1063/1.2000337
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i3/p033112_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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