Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/90699
Title: | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation | Authors: | Yang, Ming Chen, Tupei Wong, Jen It Ng, Chi Yung Liu, Yang Ding, Liang Fung, Stevenson Hon Yuen Trigg, Alastair David Tung, Chih Hang Li, Chang Ming |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics DRNTU::Engineering::Chemical engineering::Biochemical engineering |
Issue Date: | 2007 | Source: | Yang, M., Chen, T., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., et al. (2007). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. Journal of Applied Physics, 101, 1-5. | Series/Report no.: | Journal of applied physics | Abstract: | A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. | URI: | https://hdl.handle.net/10356/90699 http://hdl.handle.net/10220/6352 |
ISSN: | 0021-8979 | DOI: | 10.1063/1.2749470 | Schools: | School of Electrical and Electronic Engineering | Organisations: | A*STAR Institute of Microelectronics | Rights: | Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i12/p124313_s1?isAuthorized=no | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation .pdf | 191.9 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
20
17
Updated on Mar 3, 2024
Web of ScienceTM
Citations
20
17
Updated on Oct 30, 2023
Page view(s) 5
1,216
Updated on Mar 18, 2024
Download(s) 10
455
Updated on Mar 18, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.