Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90763
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dc.contributor.authorTseng, Ampere A.en
dc.contributor.authorLiu, Yangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorDing, Liangen
dc.contributor.authorTse, Man Siuen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2010-09-07T04:01:23Zen
dc.date.accessioned2019-12-06T17:53:33Z-
dc.date.available2010-09-07T04:01:23Zen
dc.date.available2019-12-06T17:53:33Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationTseng, A. A., Liu, Y., Chen, T. P., Ng, C. Y., Ding, L., Tse, M. S., et al. (2006). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures. IEEE Transactions on Electron Devices, 53(4), 914-917.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/90763-
dc.description.abstractIn this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si.en
dc.format.extent4 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleInfluence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2006.870528en
dc.description.versionPublished versionen
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